Galvanomagnetic properties of epitaxial MnAl films on GaAs
Leadbeater, M.L., S.J. Jr., F. Derosa, J.P. Harbison, T. Sands, Ramamoorthy Ramesh, L.T. Florez, V.G. Keramidas
Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.
Journal of Applied Physics
Year of Publication