Galvanomagnetic properties of epitaxial MnAl films on GaAs

Publication Type

Journal Article

Authors

DOI

Abstract

Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.

Journal

Journal of Applied Physics

Volume

69

Year of Publication

1991

ISSN

00218979

Notes

cited By 49

Research Areas