Galvanomagnetic properties of epitaxial MnAl films on GaAs

Journal Article

Leadbeater, M.L, S .J Jr, F Derosa, J.P Harbison, T Sands, Ramamoorthy Ramesh, L.T Florez, V.G Keramidas

10.1063/1.348298

Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.

Journal of Applied Physics

69

1991

00218979

cited By 49

Ramesh Lab