GaAs clusters in the quantum size regime: Growth on high surface area silica by molecular beam epitaxy
Publication Type
Journal Article
Authors
Sandroff, C.J, J.P Harbison, Ramamoorthy Ramesh, M.J Andrejco, M.S Hegde, D.M Hwang, C.C Chang, E.M Vogel
DOI
Abstract
Molecular beam epitaxy has been used to grow microcrystalline clusters of gallium arsenide (GaAs) in the size range from 2.5 to 60 nanometers on high-purity, amorphous silica supports. High-resolution transmission electron microscopy reveals that clusters as small as 3.5 nanometers have good crystalline order with a lattice constant equal to that of bulk GaAs. Study of the microcrystallite surfaces by x-ray photoelectron spectroscopy shows that they are covered with a shell (1.0 to 1.5 nanometers thick) of native oxides of gallium and arsenic (Ga2O3 and As2O 3), whose presence could explain the low luminescence efficiency of the clusters. Optical absorption spectra of the supported GaAs are consistent with the blue-shifted band edge expected for semiconductor microcrystallites in the quantum size regime.
Journal
Science
Volume
245
Year of Publication
1989
ISSN
00368075
Notes
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