Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films

Publication Type:

Journal Article

Authors:

L. Chen; J. Ouyang; C.S. Ganpule; V. Nagarajan; Ramamoorthy Ramesh; A.L. Roytburd

Source:

Applied Physics Letters, Volume 84, Number 2, p.254-256 (2004)

Keywords:

atomic force microscopy, electric conductivity, Epitaxial ferroelectric thin films, Epitaxial growth, Ferroelectric thin films, piezoelectricity, Piezoresponse force microscopy, Relaxation processes

Abstract:

A cylindrical 180° domain was stabilized by the formation of 90° domains to relax stress that arises due to the opposite signs of the converse piezoelectric effects in the switched 180° domain and the unswitched film surrounding. It was found that the formation of 90° domains can be effective mechanism for the piezostress relaxation in 180° domains and their stabilization.

Notes:

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