Publication Type:Journal Article
Source:Nature Materials, Nature Publishing Group, Volume 9, Number 5, p.380-381 (2010)
Keywords:Exchange bias couplings, Ferroelectric materials, Ferroelectric polarization, Ferroelectric tunnel junctions, ferroelectricity, Ferromagnetic layers, Ferromagnetic materials, Ferromagnetism, Interface states, Low-power consumption, Magnetic couplings, Magnetic electrodes, Magnetism, Magnetoelectronics, Magnets, Polarization, spin polarization, Spintronic device, Superconducting materials, Theoretical calculations, Tunnel junctions
The use of interface effects for low-power-consumption spintronic devices with the help of a ferroelectric tunnel junction to control the spin polarization of adjacent magnetic electrodes is discussed. The ever-increasing demand for faster, smaller and non-volatile electronics is pushing the limits of present semiconductor-based information processing and storage systems. Ferromagnetic layers in contact with an anti-ferromagnet exhibit an interfacial magnetic coupling termed as exchange bias coupling. Theoretical calculations have predicted the possibility of significant changes in the interfacial magnetization and spin polarization in a ferromagnet in response to the ferroelectric polarization state across the interface. Ferromagnetism and spin polarization can be controlled and manipulated through a coupling of a magnetic layer to a ferroelectric or a multiferroic.
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