Ferroelectric pbzr0.2ti0.8o3 thin films on epitaxial y-ba-cu-o
Ramesh, Ramamoorthy, A. Inam, W.K. Chan, B. Wilkens, F. Tillerot, T. Sands, J.M. Tarascon, J. Bullington, J. Evans
Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline  LaAlO3- Rutherford Backscattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2 (at 7.5V, 1kHz), a remanence of 5–6μC/cm2 and a coercive field of about 40kV/cm. © 1992, Taylor & Francis Group, LLC. All rights reserved.
Year of Publication