Publication Type:Conference Paper
Source:Materials Research Society Symposium - Proceedings, Publ by Materials Research Society, Pittsburgh, PA, United States, Volume 310, p.195-200 (1993)
Keywords:Aging characteristics, Capacitors, Fatigue characteristics, Ferroelectric devices, Ferroelectric materials, heterostructures, Lanthanum strontium cobalt oxide, Lead zirconate titanate, reliability, Reliability testing, Semiconducting silicon, thin films
We report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperatures and at 100°C. They have been grown on (001) Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite 'template' layer (200-300A thick), grown between the YSZ buffer layer and bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures posses two advantages : (1) the growth temperatures are lower by 60-150DGRC; (ii) the capacitors show a large remnant polarization, AP, (ΔP = switched polarization- non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70 kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.
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