Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growth

Publication Type

Journal Article

Authors

DOI

Abstract

Ferroelectric Pb0.9La0.1Zr0.2Ti 0.8O3 thin film capacitors with a symmetrical La-Sr-Co-O top and bottom electrodes have been grown on [001] Si with yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite "template" layer (200-300 Å thick), grown between the YSZ buffer layer and the bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with the Y-Ba-Cu-O top and bottom electrodes, these structures possess two advantages: (i) the growth temperatures are lower by 60-150°C; (ii) the capacitors show a larger remnant polarization ΔP (ΔP=switched polarization-nonswitched polarization), 25-30 μC/cm2, for an applied voltage of only 2 V (applied field of 70 kV/cm). The fatigue, retention, and aging characteristics of these new structures are excellent.

Journal

Applied Physics Letters

Volume

63

Year of Publication

1993

ISSN

00036951

Notes

cited By 325

Organization

Research Areas