Publication Type:Journal Article
Source:Applied Physics Letters, Volume 82, Number 26, p.4770-4772 (2003)
Keywords:Auger electron spectroscopy, Carrier concentration, Coercive force, Electric resistance, Ferroelectric devices, Gates (transistor), Magnetic hysteresis, Nonvolatile storage, Polarization, pulsed laser deposition, Remanence, Remnant polarization, Secondary ion mass spectrometry, Semiconducting films, Solid solutions, X ray photoelectron spectroscopy
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
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