Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel

Journal Article

Schrott, A.G, J.A Misewich, V Nagarajan, Ramamoorthy Ramesh

10.1063/1.1588753

The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.

Applied Physics Letters

82

2003

00036951

cited By 39

Ramesh Lab