Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel

Publication Type:

Journal Article


Applied Physics Letters, Volume 82, Number 26, p.4770-4772 (2003)


The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.


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