Publication Type:Conference Paper
Source:Materials Research Society Symposium - Proceedings, Volume 747, p.287-292 (2003)
Keywords:Carrier concentration, electric potential, Ferroelectric materials, Field effect transistors, Gate voltage, hysteresis, Solid solutions
A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.
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