Ferroelectric domain structure in epitaxial BiFeO 3 films

Publication Type:

Journal Article

Authors:

F. Zavaliche; R.R. Das; D.M. Kim; C.B. Eom; S.Y. Yang; P. Shafer; Ramamoorthy Ramesh

Source:

Applied Physics Letters, Volume 87, Number 18, p.1-3 (2005)

Keywords:

bismuth compounds, Cantilever beams, crystal structure, Crystallography, Ferroelectric domain structure, ferroelectricity, film growth, In-plane piezoresponse, Light polarization, Piezoelectric force microscopy, Polarization direction

Abstract:

Piezoelectric force microscopy is employed to study the ferroelectric domain structure in a 600 nm thick epitaxial BiFe O3 film. In the as-grown film, a mosaic-like domain structure is observed. Scans taken with the cantilever pointing along the principal crystallographic directions enabled us to reconstruct the polarization direction. By combining the perpendicular and in-plane piezoresponse data, we found that the ferroelectric domain structure is mainly described by four polarization directions. These directions point oppositely along two body diagonals, which form an angle of ∼71°. The other variants are also occasionally observed. © 2005 American Institute of Physics.

Notes:

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