Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Publication Type:

Journal Article


Applied Physics Letters, Volume 80, Number 25, p.4801-4803 (2002)


Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.


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