Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Journal Article

Liu, B.T, K Maki, Y So, V Nagarajan, Ramamoorthy Ramesh, J Lettieri, J.H Haeni, D.G Schlom, W Tian, X.Q Pan, F.J Walker, R.A McKee

10.1063/1.1484552

Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.

Applied Physics Letters

80

2002

00036951

cited By 57

Ramesh Lab