Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films
Lettieri, J., Y. Jia, M. Urbanik, C.I. Weber, J-P. Maria, D.G. Schlom, H. Li, Ramamoorthy Ramesh, R. Uecker, P. Reiche
Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth. © 1998 American Institute of Physics.
Applied Physics Letters
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