Publication Type:Journal Article
Source:Applied Physics Letters, Volume 85, Number 13, p.2574-2576 (2004)
Keywords:Actuators, bismuth compounds, Compressive stress, Electromagnetic wave polarization, electron diffraction, Ferroelectric materials, film growth, Heteroepitaxial growth, Hysteresis loops, Microelectromechanical devices, molecular beam epitaxy, Permittivity, Piezoelectric coefficients, Piezoelectric materials, piezoelectricity, pulsed laser deposition, Pulsed remnant polarization, Thermal stress, thin films, transmission electron microscopy, X ray diffraction analysis
The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.
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