Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3
Publication Type
Journal Article
Authors
Seidel, J, M Trassin, Y Zhang, P Maksymovych, T Uhlig, P Milde, D Köhler, A.P Baddorf, S.V Kalinin, L.M Eng, X Pan, Ramamoorthy Ramesh
DOI
Abstract
Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Journal
Advanced Materials
Volume
26
Year of Publication
2014
ISSN
09359648
Notes
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