Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3

Journal Article

Seidel, J., M. Trassin, Y. Zhang, P. Maksymovych, T. Uhlig, P. Milde, D. Köhler, A.P. Baddorf, S.V. Kalinin, L.M. Eng, X. Pan, Ramamoorthy Ramesh

10.1002/adma.201400557

Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced Materials

26

2014

09359648

cited By 50

Ramesh Lab