Publication Type:Conference Paper
Source:Materials Research Society Symposium Proceedings, Volume 881, p.125-130 (2005)
Keywords:Epitaxial films, Ferroelectric films, Lead compounds, MEMS, Orientation dependence, Piezoelectric constant, Piezoelectric materials, Sensor devices, sensors, Si substrates, silicon
Following our previous work on the converse piezoelectric constant-d 33.fC in epitaxial ferroelectric films for MEMS actuator applications', the orientation dependence of the direct piezoelectric constants d33,fD, d31.fD and d 33,fD are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures. © 2005 Materials Research Society.
cited By 0