Publication Type:Journal Article
Source:Applied Physics Letters, Volume 60, Number 14, p.1744-1746 (1992)
The dielectric constant of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field-effect devices has been studied. in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.
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