Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects

Publication Type:

Journal Article

Source:

Applied Physics Letters, American Institute of Physics Inc., Volume 77, Number 11, p.1695-1697 (2000)

Abstract:

A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm-2 as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.

Notes:

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