Current status of thin film (Ba,Sr)TiO3 tunable microwave components for RF communications

Publication Type:

Conference Paper


Integrated Ferroelectrics, Volume 34, Number 1-4, p.1605/165-1616/176 (2001)


The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film BaxSr1-xTiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200° at 18 GHz and a figure of merit of 74.3°/dB). Issues of post-annealing, Mn-doping and BaxSr1-xTiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.


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