Copper-alloyed ZnS as a p-type transparent conducting material

Publication Type:

Journal Article

Authors:

A.M. Diamond; L. Corbellini; K.R. Balasubramaniam; S. Chen; S. Wang; T.S. Matthews; L.-W. Wang; Ramamoorthy Ramesh; J.W. Ager

Source:

Physica Status Solidi (A) Applications and Materials Science, Volume 209, Number 11, p.2101-2107 (2012)

Keywords:

Acceptor doping, copper, Cu content, films, Hall effect measurement, Heterojunction diodes, Heterojunctions, High transparency, Hole conduction, Hole conductivity, P-type, pulsed laser deposition, S-phase, Semiconductor diodes, Semiconductor doping, transparency, Transparent conducting materials, Transparent conductors, zinc oxide, Zinc sulfide, zno

Abstract:

Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06-0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm -1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Notes:

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