Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering

Publication Type

Journal Article

Authors

Maki, K, B.T Liu, H Vu, V Nagarajan, Ramamoorthy Ramesh, Y Fujimori, T Nakamura, H Takasu

DOI

Abstract

Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.

Journal

Applied Physics Letters

Volume

Year of Publication

2003

ISSN

00036951

Notes

cited By 36

Research Areas

Ramesh Lab