Publication Type:Journal Article
Source:Applied Physics Letters, Volume 82, Number 8, p.1263-1265 (2003)
Keywords:Capacitors, crystallization, electrodes, Ferroelectric thin films, film growth, microstructure, nucleation, Saturation voltage, Sol-gels
Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
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