Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films
Publication Type
Journal Article
Authors
Zhang, J.X., Y.L. Li, S. Choudhury, L.Q. Chen, Y.H. Chu, F. Zavaliche, M.P. Cruz, Ramamoorthy Ramesh, Q.X. Jia
DOI
Abstract
Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.
Journal
Journal of Applied Physics
Volume
103
Year of Publication
2008
ISSN
00218979