Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films

Publication Type:

Journal Article

Authors:

J.X. Zhang; Y.L. Li; S. Choudhury; L.Q. Chen; Y.H. Chu; F. Zavaliche; M.P. Cruz; Ramamoorthy Ramesh; Q.X. Jia

Source:

Journal of Applied Physics, Volume 103, Number 9 (2008)

Keywords:

bismuth compounds, Computer simulation, Constraint theory, Coulomb interactions, crystal orientation, Epitaxial films, Ferroelectric domain structures, Ferroelectric materials, Film orientations

Abstract:

Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.

Notes:

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