Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

Publication Type:

Journal Article

Authors:

T. Zhao; S.B. Ogale; S.R. Shinde; Ramamoorthy Ramesh; R. Droopad; J. Yu; K. Eisenbeiser; J. Misewich

Source:

Applied Physics Letters, Volume 84, Number 5, p.750-752 (2004)

Keywords:

Colossal magnetoresistance, Drain electrodes, electric conductivity, Electric fields, electrodes, Field effect transistors, film growth, lanthanum compounds, Magnetic fields, Magnetic hysteresis, Magnetization, Metal insulator transition, Perovskite, phase separation, pulsed laser deposition, Semiconducting channels, Semiconducting manganese compounds, Semiconducting silicon, thin films

Abstract:

An all-perovskite ferroelectric field effect transistors (FeFET) structure with a ferroelectric Pb(Zr 0.2Ti 0.8)O 3 (PZT) gate and a colossal magnetoresistive (CMR) La 0.8Ca 0.2MnO 3 (LCMO) channel was fabricated by pulsed laser deposition (PLD). The tunability of the channel resistance under electric and magnetic fields was studied. The resistivity change under electric and magnetic fields was explained using the electronic phase separation scenario. A maximum modulation of 20% after an electric field poling of 1.5 × 10 5 V/cm and 50% under a magnetic field of 1T was observed near the metal-insulator transition temperature.

Notes:

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