Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

Publication Type:

Journal Article


Applied Physics Letters, Volume 84, Number 5, p.750-752 (2004)


An all-perovskite ferroelectric field effect transistors (FeFET) structure with a ferroelectric Pb(Zr 0.2Ti 0.8)O 3 (PZT) gate and a colossal magnetoresistive (CMR) La 0.8Ca 0.2MnO 3 (LCMO) channel was fabricated by pulsed laser deposition (PLD). The tunability of the channel resistance under electric and magnetic fields was studied. The resistivity change under electric and magnetic fields was explained using the electronic phase separation scenario. A maximum modulation of 20% after an electric field poling of 1.5 × 10 5 V/cm and 50% under a magnetic field of 1T was observed near the metal-insulator transition temperature.


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