+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures
Publication Type
Journal Article
Authors
Yang, S.Y., Q. Zhan, P.L. Yang, M.P. Cruz, Y.H. Chu, Ramamoorthy Ramesh, Y.R. Wu, J. Singh, W. Tian, D.G. Schlom
DOI
Abstract
The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.
Journal
Applied Physics Letters
Volume
91
Year of Publication
2007
ISSN
00036951
Notes
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