+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures

Journal Article

Yang, S.Y, Q Zhan, P.L Yang, M.P Cruz, Y.H Chu, Ramamoorthy Ramesh, Y.R Wu, J Singh, W Tian, D.G Schlom

10.1063/1.2757089

The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.

Applied Physics Letters

91

2007

00036951

cited By 52

Ramesh Lab