+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures
Yang, S.Y., Q. Zhan, P.L. Yang, M.P. Cruz, Y.H. Chu, Ramamoorthy Ramesh, Y.R. Wu, J. Singh, W. Tian, D.G. Schlom
The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.
Applied Physics Letters
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