+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures

Publication Type

Journal Article

Authors

DOI

Abstract

The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.

Journal

Applied Physics Letters

Volume

91

Year of Publication

2007

ISSN

00036951

Research Areas