Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Publication Type:

Journal Article

Authors:

B.-C. Huang; P. Yu; Y.H. Chu; C.-S. Chang; Ramamoorthy Ramesh; R.E. Dunin-Borkowski; P. Ebert; Y.-P. Chiu

Source:

ACS Nano, American Chemical Society, Volume 12, Number 2, p.1089-1095 (2018)

Keywords:

BiFeO3, Cross-sectional scanning tunneling microscopies, Electronic interface, Electronic states, Energy gap, Hetero-interfaces, Interface property, Interface states, La0.7Sr0.3MnO3, lanthanum compounds, Magnetic interface properties, manganese compounds, Physical effects, scanning tunneling microscopy, Strontium compounds

Abstract:

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides. © 2018 American Chemical Society.

Notes:

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