Publication Type:Journal Article
Source:Advanced Materials, Volume 23, Number 13, p.1530-1534 (2011)
Keywords:Article, Atomic scale, Band gaps, BiFeO<sub>3</sub>, bismuth, Built-in potential, chemistry, Conducting channels, Cross-sectional scanning tunneling microscopies, density functional theory, Domain boundary, Domain walls, electron, Electronic configuration, Electronic properties, Electronic structure, electrons, Ferric Compounds, ferric ion, Local electronic structures, microscopy, Multiferroics, Polarization, polarization discontinuity, Scanning, Scanning Tunneling, scanning tunneling microscopy, scanning tunneling microscopy (STM), temperature, Walls (structural partitions)
Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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