Publication Type:Journal Article
Source:Applied Physics Letters, Volume 91, Number 7 (2007)
Keywords:adsorption, Adsorption-controlled growth, bismuth compounds, bismuth oxides, Differential vapor pressures, Epitaxial growth, molecular beam epitaxy, stoichiometry, thin films
BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. © 2007 American Institute of Physics.
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