Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

Journal Article

Ihlefeld, J.F, A Kumar, V Gopalan, D.G Schlom, Y.B Chen, X.Q Pan, T Heeg, J Schubert, X Ke, P Schiffer, J Orenstein, L.W Martin, Y.H Chu, Ramamoorthy Ramesh

10.1063/1.2767771

BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. © 2007 American Institute of Physics.

Applied Physics Letters

91

2007

00036951

cited By 70

Ramesh Lab