Publication Type:Conference Paper
Source:IEEE International Symposium on Applications of Ferroelectrics, Volume 3 (2008)
Keywords:adsorption, Algan/gan, bismuth, bismuth oxides, Controlled growths, crystal growth, Crystals, Differential vapor pressures, electric conductivity, Energy gap, Epitaxial films, Epitaxial growth, Epitaxial layers, Ferroelectric materials, Gallium alloys, Gallium nitride, Growth (materials), Hemt structures, Hydrostatic pressure, Metallorganic vapor phase epitaxy, molecular beam epitaxy, Molecular-beam epitaxies, Plane orientations, Plane rotations, Rocking curves, Semi-conductors, Semiconducting bismuth compounds, Semiconducting gallium, Semiconducting silicon compounds, semiconductor growth, Semiconductor materials, SiC single crystals, Silicon carbide, Single crystals, stoichiometry, thin films, vapor pressure, Wide bands, X-ray diffractions
BiFeO3 thin films have been deposited on (101) DyScO 3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002°). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [112̄0] BiFeO3 || [112̄0] GaN (SiC) plus a twin variant related by a 180° in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.
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