Publications

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Conference Paper
Friessnegg, T., B. Nielsen, V.J. Ghosh, A.R. Moodenbaugh, S. Madhukar, S. Aggarwal, D.J. Keeble, E.H. Poindexter, P. Mascher, and Ramamoorthy Ramesh. "Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 161-165.
Keeble, D.J., S. Madhukar, B. Nielsen, A. Krishnan, P. Asoka-Kumar, S. Aggarwal, Ramamoorthy Ramesh, and E.H. Poindexter. "Vacancy related defects in La0.5Sr0.5CoO3-δ thin films." Materials Research Society Symposium - Proceedings. Vol. 477. MRS, Warrendale, PA, United States, 1997. 229-233.
Journal Article
Aggarwal, S., S. Madhukar, B. Nagaraj, I.G. Jenkins, Ramamoorthy Ramesh, L. Boyer, and J .T., Jr. "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716-718.
Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters (1995) 1350.
Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters 68 (1996) 1350-1352.
Jenkins, I.G., T.K. Song, S. Madhukar, A.S. Prakash, S. Aggarwal, and Ramamoorthy Ramesh. "Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors." Applied Physics Letters 72 (1998) 3300-3302.
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter. "Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543-3547.
Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589-1594.
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, S.B. Samavedam, S. Choopun, and R.P. Sharma. "Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology." Journal of Materials Research 14 (1999) 940-947.
Aggarwal, S., S.R. Perusse, S. Madhukar, T.K. Song, C.L. Canedy, Ramamoorthy Ramesh, S. Choopun, R.P. Sharma, T. Venkatesan, and S.M. Green. "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171-179.
Keeble, D.J., B. Nielsen, A. Krishnan, K.G. Lynn, S. Madhukar, Ramamoorthy Ramesh, and C.F. Young. "Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation." Applied Physics Letters 73 (1998) 318-320.
Keeble, D.J., A. Krishnan, T. Friessnegg, B. Nielsen, S. Madhukar, S. Aggarwal, Ramamoorthy Ramesh, and E.H. Poindexter. "Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation." Applied Physics Letters 73 (1998) 508-510.