Publications

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Seidel, J., L.W. Martin, Q. He, Q. Zhan, Y.-H. Chu, A. Rother, M.E. Hawkridge, P. Maksymovych, P. Yu, M. Gajek, N. Balke, S.V. Kalinin, S. Gemming, F. Wang, G. Catalan, J.F. Scott, N.A. Spaldin, J. Orenstein, and Ramamoorthy Ramesh. "Conduction at domain walls in oxide multiferroics." Nature Materials 8 (2009) 229-234.
Seidel, J., D. Fu, S.-Y. Yang, E. Alarcón-Lladó, J. Wu, Ramamoorthy Ramesh, and J.W. Ager. "Efficient photovoltaic current generation at ferroelectric domain walls." Physical Review Letters 107 (2011).
Seidel, J., and Ramamoorthy Ramesh. Probing nanoscale electronic conduction in complex oxides. Wiley-VCH Verlag, 2013.
Seidel, J., S.-Y. Yang, E. Alarcón-Lladó, J.W. Ager, and Ramamoorthy Ramesh. "Nanoscale probing of high photovoltages at 109 domain walls." Ferroelectrics 433 (2012) 123-126.
Scullin, M.L., C. Yu, M. Huijben, S. Mukerjee, J. Seidel, Q. Zhan, J. Moore, A. Majumdar, and Ramamoorthy Ramesh. "Anomalously large measured thermoelectric power factor in Sr1-x Lax TiO3 thin films due to SrTiO3 substrate reduction." Applied Physics Letters 92 (2008).
Scullin, M.L., J. Ravichandran, C. Yu, M. Huijben, J. Seidel, A. Majumdar, and Ramamoorthy Ramesh. "Pulsed laser deposition-induced reduction of SrTiO3 crystals." Acta Materialia 58 (2010) 457-463.
Schrott, A.G., J.A. Misewich, D.W. Abraham, Ramamoorthy Ramesh, and V. Nagarajan. "Oxide electrodes for buried-channel field effect transistors." Materials Research Society Symposium - Proceedings 666 (2001) F541-F546.
Schrott, A.G., J.A. Misewich, Ramamoorthy Ramesh, and V. Nagarajan. "Ferroelectric field effect device." Materials Research Society Symposium - Proceedings. Ed. D., Ginley, Guha S., Carter S., Chambers S.A., Droopad R., Hosono H., Paine D.C., Schlom D.G., and Tate J. Vol. 747. 2003. 287-292.
Schrott, A.G., J.A. Misewich, V. Nagarajan, and Ramamoorthy Ramesh. "Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel." Applied Physics Letters 82 (2003) 4770-4772.
Schmitz, T., K. Prume, S. Tiedke, A. Roelofs, T. Schneller, U. Kall, M. Grossmann, R. Waser, C. Ganpule, A. Stanishefsky, and Ramamoorthy Ramesh. "Electrical measurements on capacitor sizes in the submicron regime for the characterization of real memory cell capacitors." Integrated Ferroelectrics. Vol. 37. 2001. 163-172.
Schlom, D.G., L.-Q. Chen, C.J. Fennie, V. Gopalan, D.A. Muller, X. Pan, Ramamoorthy Ramesh, and R. Uecker. "Elastic strain engineering of ferroic oxides." MRS Bulletin 39 (2014) 118-130.
Schaab, J., M. Trassin, A. Scholl, A. Doran, Z. Yan, E. Bourret, Ramamoorthy Ramesh, and D. Meier. "Ferroelectric domains in the multiferroic phase of ErMnO3 imaged by low-temperature photoemission electron microscopy." Journal of Physics: Conference Series. Ed. M., Dalmas. Vol. 592. Institute of Physics Publishing, 2014.
Schaab, Jakob, Morgan Trassin, Andreas Scholl, Andrew Doran, Zewu Yan, Edith Bourret, Ramamoorthy Ramesh, and Dennis Meier. "Ferroelectric Domains in the Multiferroic Phase of ErMnO3 Imaged by Low-Temperature Photoemission Electron Microscopy." Journal of Physics: Conference Series 592.1 (2015) 012120.
Schaab, J., A. Cano, M. Lilienblum, Z. Yan, E. Bourret, Ramamoorthy Ramesh, M. Fiebig, and D. Meier. "Optimization of Electronic Domain-Wall Properties by Aliovalent Cation Substitution." Advanced Electronic Materials 2 (2016).
Schaab, Jakob, Andres Cano, Martin Lilienblum, Zewu Yan, Edith Bourret, Ramamoorthy Ramesh, Manfred Fiebig, and Dennis Meier. "Optimization of Electronic Domain-Wall Properties by Aliovalent Cation Substitution." Advanced Electronic Materials 2 (2016) 1500195.
Schaab, J., I.P. Krug, F. Nickel, D.M. Gottlob, Doǧ Anay, A. Cano, M. Hentschel, Z. Yan, E. Bourret, C.M. Schneider, Ramamoorthy Ramesh, and D. Meier. "Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy." Applied Physics Letters 104 (2014).
Saraf, L.V., S.E. Lofland, A.V. Cresce, S.M. Bhagat, and Ramamoorthy Ramesh. "Structural and ferromagnetic resonance characteristics of BaFe12O19 films with minimal linewidths." Applied Physics Letters 79 (2001) 385-387.
Saraf, L.V., S.B. Ogale, Z. Chen, R.P. Godfrey, T. Venkatesan, and Ramamoorthy Ramesh. "Correlation of large dielectric response with the ordering transitions in PR0.67Ca0.33MnO3." Physical Review B - Condensed Matter and Materials Physics 62 (2000) R11961-R11964.
Saraf, L.V., S.E. Lofland, A. Von Cresce, A.P. Monga, S.M. Bhagat, and Ramamoorthy Ramesh. "Observation of nearly intrinsic ferromagnetic resonance linewidth in BaFe 12O 19 films deposited by pulsed laser deposition." IEEE Transactions on Magnetics 37 (2001) 2377-2379.
Sands, T., J.P. Harbison, M.L. Leadbeater, S.J. Allen, Jr., G.W. Hull, Ramamoorthy Ramesh, and V.G. Keramidas. "Epitaxial ferromagnetic τ-MnAl films on GaAs." Applied Physics Letters 57 (1990) 2609-2611.
Sands, T., J. De Boeck, J.P. Harbison, A. Scherer, H.L. Gilchrist, T.L. Cheeks, P.F. Miceli, Ramamoorthy Ramesh, and V.G. Keramidas. "The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs." Journal of Applied Physics 73 (1993) 6399-6401.
Sands, T., C.J. Palmstrøm, J.P. Harbison, V.G. Keramidas, N. Tabatabaie, T.L. Cheeks, Ramamoorthy Ramesh, and Y. Silberberg. "Stable and epitaxial metal/III-V semiconductor heterostructures." Materials Science Reports 5 (1990) 99-170.
Sands, T., J.P. Harbison, Ramamoorthy Ramesh, C.J. Palmstrøm, L.T. Florez, and V.G. Keramidas. "Interface crystallography and stability in epitaxial metal (NiAl, CoAl)/III-V Semiconductor heterostructures." Materials Science and Engineering B 6 (1990) 147-157.
Sandroff, C.J., J.P. Harbison, Ramamoorthy Ramesh, M.J. Andrejco, M.S. Hegde, D.M. Hwang, C.C. Chang, and E.M. Vogel. "GaAs clusters in the quantum size regime: Growth on high surface area silica by molecular beam epitaxy." Science 245 (1989) 391-393.
Sadashivan, S., S. Aggarwal, T.K. Song, Ramamoorthy Ramesh, J .T., Jr., B.A. Tuttle, W.L. Warren, and D. Dimos. "Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors." Journal of Applied Physics 83 (1998) 2165-2171.

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