Publications

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Journal Article
Dhote, A.M., O. Auciello, D.M. Gruen, and Ramamoorthy Ramesh. "Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques." Applied Physics Letters 79 (2001) 800-802.
Im, J., A.R. Krauss, A.M. Dhote, D.M. Gruen, O. Auciello, Ramamoorthy Ramesh, and R.P.H. Chang. "Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions." Applied Physics Letters 72 (1998) 2529-2531.
Krauss, A.R., O. Auciello, A.M. Dhote, J. Im, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller. "Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties." Integrated Ferroelectrics 32 (2001) 121-131.
Wei, W., A.M. Dhote, Ramamoorthy Ramesh, and S. Sauvage. "Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon." Integrated Ferroelectrics 12 (1996) 53-62.
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, S.B. Samavedam, S. Choopun, and R.P. Sharma. "Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology." Journal of Materials Research 14 (1999) 940-947.
Liu, B.T., K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, and O. Auciello. "Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer." Applied Physics Letters 80 (2002) 3599-3601.
Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589-1594.
Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki. "Lead based ferroelectric capacitors for low voltage non-volatile memory applications." Integrated Ferroelectrics 19 (1998) 159-177.
Yang, B., S. Aggarwal, A.M. Dhote, T.K. Song, Ramamoorthy Ramesh, and J.S. Lee. "La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier." Applied Physics Letters 71 (1997) 356-358.
Aggarwal, S., A.M. Dhote, Ramamoorthy Ramesh, W.L. Warren, G.E. Pike, D. Dimos, M.V. Raymond, B.A. Tuttle, and J .T., Jr. "Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes." Applied Physics Letters 69 (1996) 2540-2542.
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter. "Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543-3547.
Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters (1995) 1350.
Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters 68 (1996) 1350-1352.
Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387-3394.
Aggarwal, S., A.M. Dhote, H. Li, S. Ankem, and Ramamoorthy Ramesh. "Conducting barriers for vertical integration of ferroelectric capacitors on Si." Applied Physics Letters 74 (1999) 230-232.