Publications

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Aggarwal, S., S.R. Perusse, S. Madhukar, T.K. Song, C.L. Canedy, Ramamoorthy Ramesh, S. Choopun, R.P. Sharma, T. Venkatesan, and S.M. Green. "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171-179.
Aggarwal, S., S.R. Perusse, C.J. Kerr, Ramamoorthy Ramesh, D.B. Romero, J .T., Jr., L. Boyer, and G. Velasquez. "Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors." Applied Physics Letters 76 (2000) 918-920.
Ganpule, C.S., V. Nagarajan, H. Li, A.S. Ogale, D.E. Steinhauer, S. Aggarwal, E. Williams, Ramamoorthy Ramesh, and P. De Wolf. "Role of 90° domains in lead zirconate titanate thin films." Applied Physics Letters 77 (2000) 292-294.
Nagarajan, V., S.P. Alpay, C.S. Ganpule, B.K. Nagaraj, S. Aggarwal, E.D. Williams, A.L. Roytburd, and Ramamoorthy Ramesh. "Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films." Applied Physics Letters 77 (2000) 438-440.
Van Keuls, F.W., C.H. Mueller, F.A. Miranda, R.R. Romanofsky, C.L. Canedy, S. Aggarwal, T. Venkatesan, Ramamoorthy Ramesh, J.S. Horwitz, W. L Chang, and W.J. Kim. "Room temperature thin film BaxSr1-xTiO3 Ku-band coupled microstrip phase shifters: effects of film thickness, doping, annealing and substrate choice." IEEE MTT-S International Microwave Symposium Digest. Vol. 2. IEEE, Piscataway, NJ, United States, 1999. 737-740.
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Ganpule, C.S., A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, Ramamoorthy Ramesh, V. Joshi, and Paz De Araujo. "Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films." Applied Physics Letters 75 (1999) 3874-3876.
Ganpule, C.S., A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and Ramamoorthy Ramesh. "Scaling of ferroelectric properties in thin films." Applied Physics Letters 75 (1999) 409-411.
Ramesh, Ramamoorthy, S. Aggarwal, and O. Auciello. "Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories." Materials Science and Engineering: R: Reports 32 (2001) 191-236.
Shinde, S.R., S.B. Ogale, V. Novikov, A.S. Ogale, Ramamoorthy Ramesh, E.D. Williams, and S. Aggarwal. "Self-organized pattern formation in the oxidation of supported iron thin films. I. An experimental study." Physical Review B - Condensed Matter and Materials Physics 64 (2001).
Aggarwal, S., A.P. Monga, S.R. Perusse, Ramamoorthy Ramesh, V. Ballarotto, E.D. Williams, B.R. Chalamala, Y. Wei, and R.H. Reuss. "Spontaneous ordering of oxide nanostructures." Science 287 (2000) 2235-2237.
Chalamala, B.R., Y. Wei, R.H. Reuss, S. Aggarwal, S.R. Perusse, B.E. Gnade, and Ramamoorthy Ramesh. "Stability and chemical composition of thermally grown iridium-oxide thin films." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18 (2000) 1919-1922.
Alpay, S.P., V. Nagarajan, L.A. Bendersky, M.D. Vaudin, S. Aggarwal, Ramamoorthy Ramesh, and A.L. Roytburd. "The stress state and domain structure of epitaxial PbZr0.2Ti0.8O3 films on (001) SrTiO3 with and without la0.5r0.5CoO3 electrode layer." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 357-362.
Canedy, C.L., S. Aggarwal, H. Li, T. Venkatesan, Ramamoorthy Ramesh, F.W. Van Keuls, R.R. Romanofsky, and F.A. Miranda. "Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O 12/ZrO2 heterostructures grown on silicon." Applied Physics Letters 77 (2000) 1523-1525.
Krauss, A.R., O. Auciello, A.M. Dhote, J. Im, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller. "Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties." Integrated Ferroelectrics 32 (2001) 121-131.
Auciello, O., A.R. Krauss, I.M. Jaemo, A. Dhote, D.M. Gruen, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller. "Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques." Integrated Ferroelectrics. Vol. 27. Gordon & Breach Science Publ Inc, Newark, 1999. 103-118.
Krauss, A.R., A. Dhote, O. Auciello, J. Im, Ramamoorthy Ramesh, and S. Aggarwal. "Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors." Integrated Ferroelectrics. Vol. 27. Gordon & Breach Science Publ Inc, Newark, 1999. 147-157.
Fhessnegg, T., S. Aggarwal, B. Nielsen, Ramamoorthy Ramesh, D.J. Keeble, and E.H. Poindcxtor. "A study of vacancy-related defects in (pb,la)(zr,ti)o3 thin films using positron annihilation." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 47 (2000) 916-920.
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C.J. Kerr, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J .T., Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787-1789.

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