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Aggarwal, S., S.B. Ogale, C.S. Ganpule, S.R. Shinde, V.A. Novikov, A.P. Monga, M.R. Burr, Ramamoorthy Ramesh, V. Ballarotto, and E.D. Williams. "Oxide nanostructures through self-assembly." Applied Physics Letters 78 (2001) 1442-1444.
Aggarwal, S., A.P. Monga, S.R. Perusse, Ramamoorthy Ramesh, V. Ballarotto, E.D. Williams, B.R. Chalamala, Y. Wei, and R.H. Reuss. "Spontaneous ordering of oxide nanostructures." Science 287 (2000) 2235-2237.
Aggarwal, S., S.R. Perusse, C.J. Kerr, Ramamoorthy Ramesh, D.B. Romero, J .T., Jr., L. Boyer, and G. Velasquez. "Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors." Applied Physics Letters 76 (2000) 918-920.
Aggarwal, S., C. Ganpule, I.G. Jenkins, B. Nagaraj, A. Stanishevsky, J. Melngailis, E. Williams, and Ramamoorthy Ramesh. "High density ferroelectric memories: Materials, processing and scaling." Integrated Ferroelectrics 28 (2000) 213-225.
Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387-3394.
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C.J. Kerr, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J .T., Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787-1789.
Aggarwal, S., S. Madhukar, B. Nagaraj, I.G. Jenkins, Ramamoorthy Ramesh, L. Boyer, and J .T., Jr. "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716-718.
Aggarwal, S., S.R. Perusse, B. Nagaraj, and Ramamoorthy Ramesh. "Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 74 (1999) 3023-3025.
Aggarwal, S., A.M. Dhote, H. Li, S. Ankem, and Ramamoorthy Ramesh. "Conducting barriers for vertical integration of ferroelectric capacitors on Si." Applied Physics Letters 74 (1999) 230-232.
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J .T., Jr. "Conducting diffusion barriers for integration of ferroelectric capacitors on Si." Integrated Ferroelectrics 25 (1999) 205-221.
Aggarwal, S., S.R. Perusse, C.W. Tipton, Ramamoorthy Ramesh, H.D. Drew, T. Venkatesan, D.B. Romero, V.B. Podobedov, and A. Weber. "Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 73 (1998) 1973-1975.
Aggarwal, S., S.R. Perusse, S. Madhukar, T.K. Song, C.L. Canedy, Ramamoorthy Ramesh, S. Choopun, R.P. Sharma, T. Venkatesan, and S.M. Green. "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171-179.
Aggarwal, S., and Ramamoorthy Ramesh. "Point defect chemistry of metal oxide heterostructures." Annual Review of Materials Science 28 (1998) 463-499.
Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki. "Lead based ferroelectric capacitors for low voltage non-volatile memory applications." Integrated Ferroelectrics 19 (1998) 159-177.
Aggarwal, S., A.M. Dhote, Ramamoorthy Ramesh, W.L. Warren, G.E. Pike, D. Dimos, M.V. Raymond, B.A. Tuttle, and J .T., Jr. "Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes." Applied Physics Letters 69 (1996) 2540-2542.