Publications
1999
Auciello, O., A.R. Krauss, I.M. Jaemo, A. Dhote, D.M. Gruen, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller."Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques."Integrated Ferroelectrics
27 (1999) 103-118. DOI
Krauss, A.R., A. Dhote, O. Auciello, J. Im, Ramamoorthy Ramesh, and S. Aggarwal."Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors."Integrated Ferroelectrics
27 (1999) 147-157. DOI
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C.J. Kerr, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J.T. Jr.."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters
75 (1999) 1787-1789. DOI
Nagarajan, V., I.G. Jenkins, S.P. Alpay, H. Li, S. Aggarwal, L. Salamanca-Riba, A.L. Roytburd, and Ramamoorthy Ramesh."Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films."Journal of Applied Physics
86 (1999) 595-602. DOI
1998
Song, T.K., S. Aggarwal, Y. Gallais, B. Nagaraj, Ramamoorthy Ramesh, and J.T. Jr.."Activation fields in ferroelectric thin film capacitors: Area dependence."Applied Physics Letters
73 (1998) 3366-3368. DOI
Jenkins, I.G., T.K. Song, S. Madhukar, A.S. Prakash, S. Aggarwal, and Ramamoorthy Ramesh."Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors."Applied Physics Letters
72 (1998) 3300-3302. DOI
Aggarwal, S., S.R. Perusse, C.W. Tipton, Ramamoorthy Ramesh, H.D. Drew, T. Venkatesan, D.B. Romero, V.B. Podobedov, and A. Weber."Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors."Applied Physics Letters
73 (1998) 1973-1975. DOI
Sadashivan, S., S. Aggarwal, T.K. Song, Ramamoorthy Ramesh, J.T. Jr., B.A. Tuttle, W.L. Warren, and D. Dimos."Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors."Journal of Applied Physics
83 (1998) 2165-2171. DOI
Stanishevsky, A., S. Aggarwal, A.S. Prakash, J. Melngailis, and Ramamoorthy Ramesh."Focused ion-beam patterning of nanoscale ferroelectric capacitors."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16 (1998) 3899-3902.
Friessnegg, T., S. Aggarwal, B. Nielsen, Ramamoorthy Ramesh, D.J. Keeble, and E.H. Poindexter."Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation."IEEE International Symposium on Applications of Ferroelectrics
(1998) 147-150.
Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics
19 (1998) 159-177. DOI
Li, H., B. Yang, A. Dhote, S. Aggarwal, L. Salamanca-Riba, and Ramamoorthy Ramesh."Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors."Materials Research Society Symposium - Proceedings
493 (1998) 171-176.
Gruverman, A., S.A. Prakash, S. Aggarwal, Ramamoorthy Ramesh, O. Auciello, and H. Tokumoto."Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy."Materials Research Society Symposium - Proceedings
493 (1998) 53-58.
Auciello, O., A. Gruverman, H. Tokumoto, S.A. Prakash, S. Aggarwal, and Ramamoorthy Ramesh."Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films."MRS Bulletin
23 (1998) 33-41.
Bernhard, J.M., A. Rouse, E.D. Sosa, D.E. Golden, B.R. Chalamala, S. Aggarwal, B.E. Gnade, and Ramamoorthy Ramesh."Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings."Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
(1998) 32-33.
Aggarwal, S., and Ramamoorthy Ramesh."Point defect chemistry of metal oxide heterostructures."Annual Review of Materials Science
28 (1998) 463-499. DOI
Alpay, S.P., A.S. Prakash, S. Aggarwal, P. Shuk, M. Greenblatt, Ramamoorthy Ramesh, and A.L. Roytburd."Polydomain formation in epitaxial PbTiO3 films."Scripta Materialia
39 (1998) 1435-1441. DOI
Alpay, S.P., A.S. Prakash, S. Aggarwal, Ramamoorthy Ramesh, A.L. Roytburd, P. Shuk, and M. Greenblatt."Polydomain structure of epitaxial PbTiO3 films on MgO."Materials Research Society Symposium - Proceedings
493 (1998) 111-116.
Song, T.K., J. Ahn, B. Yang, S. Aggarwal, and Ramamoorthy Ramesh."Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories."Journal of the Korean Physical Society
32 (1998) S1721-S1723.
Aggarwal, S., S.R. Perusse, S. Madhukar, T.K. Song, C.L. Canedy, Ramamoorthy Ramesh, S. Choopun, R.P. Sharma, T. Venkatesan, and S.M. Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics
2 (1998) 171-179. DOI
Keeble, D.J., A. Krishnan, T. Friessnegg, B. Nielsen, S. Madhukar, S. Aggarwal, Ramamoorthy Ramesh, and E.H. Poindexter."Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation."Applied Physics Letters
73 (1998) 508-510. DOI
1997
Song, T.K., S. Aggarwal, A.S. Prakash, B. Yang, and Ramamoorthy Ramesh."Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors."Applied Physics Letters
71 (1997) 2211-2213. DOI
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics
81 (1997) 3543-3547. DOI
Yang, B., S. Aggarwal, A.M. Dhote, T.K. Song, Ramamoorthy Ramesh, and J.S. Lee."La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier."Applied Physics Letters
71 (1997) 356-358. DOI
Yang, B., T.K. Song, S. Aggarwal, and Ramamoorthy Ramesh."Low voltage performance of Pb(Zr, Ti)O3 capacitors through donor doping."Applied Physics Letters
71 (1997) 3578-3580. DOI