Publications
2000
Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia
48 (2000) 3387-3394. DOI
Aggarwal, S., C. Ganpule, I.G. Jenkins, B. Nagaraj, A. Stanishevsky, J. Melngailis, E. Williams, and Ramamoorthy Ramesh."High density ferroelectric memories: Materials, processing and scaling."Integrated Ferroelectrics
28 (2000) 213-225. DOI
1999
Aggarwal, S., S. Madhukar, B. Nagaraj, I.G. Jenkins, Ramamoorthy Ramesh, L. Boyer, and J.T. Jr.."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters
75 (1999) 716-718. DOI
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J.T. Jr.."Conducting diffusion barriers for integration of ferroelectric capacitors on Si."Integrated Ferroelectrics
25 (1999) 205-221. DOI
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C.J. Kerr, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J.T. Jr.."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters
75 (1999) 1787-1789. DOI
Nagarajan, V., I.G. Jenkins, S.P. Alpay, H. Li, S. Aggarwal, L. Salamanca-Riba, A.L. Roytburd, and Ramamoorthy Ramesh."Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films."Journal of Applied Physics
86 (1999) 595-602. DOI
1998
Jenkins, I.G., T.K. Song, S. Madhukar, A.S. Prakash, S. Aggarwal, and Ramamoorthy Ramesh."Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors."Applied Physics Letters
72 (1998) 3300-3302. DOI