Skip to main content
  • Berkeley Lab
  • Energy Technologies Area
  • Energy Storage & Distributed Resources
  • Energy Conversion Group
Home
  • About Us +
    • Acknowledgements
    • Collaborations
    • Facilities Partnerships
  • Research +
    • Electric Field Control of Magnetism Using Multiferroics
    • Emergent Phenomena in Oxide Heterostructures
    • Transport in Large Spin-Orbit Coupled Oxide Heterostructures
  • Publications +
    • Top Papers

Publications

Reset Search

1997

Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI

1996

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI

1995

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI

Doe Seal  Berkeley Seal

©2023 Energy Technologies Area, Berkeley Lab

OUR ORGANIZATION

  • UC Berkeley
  • Lawrence Berkeley National Laboratory
  • Energy Technologies Area
  • Privacy and Security Notice
Lawrence Berkeley National Laboratory
  • twitter
  • instagram
  • LinkedIn
  • facebook
  • youtube
  • DOE logo
  • UC logo
A U.S. Department of Energy National Laboratory Managed by the University of California
Questions & Comments Privacy & Security Notice