Publication Type:Journal Article
Source:Nano Letters, American Chemical Society, Volume 15, Number 4, p.2229-2234 (2015)
Keywords:Ferroelastic domains, ferroelastic switching, Ferroelectric films, Ferroelectric switching, ferroelectricity, Force microscopy, lead, Nano domain, Nanoscale control, Switching, thin films, Voltage-controlled, Wall movements, zirconium
We report a voltage controlled reversible creation and annihilation of a-axis oriented ∼10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains. (Figure Presented). © 2015 American Chemical Society.
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