Publication Type:Journal Article
Source:IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers Inc., Volume 37, Number 1, p.111-114 (2016)
Keywords:Capacitance, Capacitors, Drain current, Epitaxial ferroelectric, Ferroelectric capacitors, Ferroelectric devices, Ferroelectric materials, ferroelectricity, integrated circuits, MOSFET devices, NC-FinFET, negative capacitance, Orders of magnitude, Reconfigurable hardware, Self-consistent simulations, SPICE, sub-60 mV/decade, Transfer characteristics
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.
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