Publication Type:Journal Article
Source:Advanced Materials, Wiley-VCH Verlag, Volume 28, Number 15, p.2923-2930 (2016)
Keywords:Ferroelectric films, Ferroelectric materials, Ferroelectric thin films, ferroelectricity, Field effect transistors, Memory performance, Non-volatile memory, Nonvolatile storage, Optical memory effect, Thin film ferroelectrics, thin films, Transition metal dichalcogenides, Transition metals
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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