Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Publication Type:

Journal Article

Source:

Advanced Materials, Wiley-VCH Verlag, Volume 28, Number 15, p.2923-2930 (2016)

Abstract:

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Notes:

cited By 51