02142nas a2200397 4500008004100000022001300041245008000054210006900134260002800203490000600231520107100237653001201308653001201320653001401332653001601346653002801362653002401390653001201414653001201426653001101438653001501449653002101464653001401485100001501499700001401514700001201528700001401540700001501554700001201569700001401581700001601595700001601611700002401627700001601651856007701667 2018 eng d a2041172300aConfigurable topological textures in strain graded ferroelectric nanoplates0 aConfigurable topological textures in strain graded ferroelectric bNature Publishing Group0 v93 aTopological defects in matter behave collectively to form highly non-trivial structures called topological textures that are characterised by conserved quantities such as the winding number. Here we show that an epitaxial ferroelectric square nanoplate of bismuth ferrite subjected to a large strain gradient (as much as 105 m-1) associated with misfit strain relaxation enables five discrete levels for the ferroelectric topological invariant of the entire system because of its peculiar radial quadrant domain texture and its inherent domain wall chirality. The total winding number of the topological texture can be configured from - 1 to 3 by selective non-local electric switching of the quadrant domains. By using angle-resolved piezoresponse force microscopy in conjunction with local winding number analysis, we directly identify the existence of vortices and anti-vortices, observe pair creation and annihilation and manipulate the net number of vortices. Our findings offer a useful concept for multi-level topological defect memory. © 2018 The Author(s).10aArticle10abismuth10achirality10adestruction10adiscrete element method10aelectrical property10aferrite10aleisure10amemory10amicroscopy10apiezoelectricity10avorticity1 aKim, K.-E.1 aJeong, S.1 aChu, K.1 aLee, J.H.1 aKim, G.-Y.1 aXue, F.1 aKoo, T.Y.1 aChen, L.-Q.1 aChoi, S.-Y.1 aRamesh, Ramamoorthy1 aYang, C.-H. uhttps://rameshlab.lbl.gov/publications/configurable-topological-textures02403nas a2200541 4500008004100000022001300041245008700054210006900141490000600210520093400216653001201150653002001162653001401182653002201196653002601218653001601244653002601260653002101286653001501307653001701322653001801339653003001357653001401387653001401401653002301415653002101438653001601459653002701475653002201502100001401524700001501538700001101553700001401564700001401578700001201592700001501604700001601619700001301635700001401648700001701662700001601679700001501695700001601710700002401726700001601750700001601766856007901782 2011 eng d a2041172300aConcurrent transition of ferroelectric and magnetic ordering near room temperature0 aConcurrent transition of ferroelectric and magnetic ordering nea0 v23 aStrong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO3 is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications. © 2011 Macmillan Publishers Limited. All rights reserved.10aArticle10abismuth ferrite10achemistry10acrystal structure10aelectrical parameters10aelectricity10aelectromagnetic field10aFerric Compounds10aferric ion10aferric oxide10aFerroelectric10amagnetic neel temperature10aMagnetics10aMagnetism10aphysical phenomena10aroom temperature10atemperature10atransition temperature10aunclassified drug1 aKo, K.-T.1 aJung, M.H.1 aHe, Q.1 aLee, J.H.1 aWoo, C.S.1 aChu, K.1 aSeidel, J.1 aJeon, B.-G.1 aOh, Y.S.1 aKim, K.H.1 aLiang, W.-I.1 aChen, H.-J.1 aChu, Y.-H.1 aJeong, Y.H.1 aRamesh, Ramamoorthy1 aPark, J.-H.1 aYang, C.-H. uhttps://rameshlab.lbl.gov/publications/concurrent-transition-ferroelectric