01432nas a2200205 4500008004100000022001300041245006400054210006300118490000700181520081700188100002101005700001601026700001801042700001701060700001601077700001601093700001701109700002401126856007601150 2011 eng d a1098012100aTuning the electronic effective mass in double-doped SrTiO30 aTuning the electronic effective mass in doubledoped SrTiO30 v833 aWe elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO 3-δ, we can tune the effective mass ranging from 6 to 20m e as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum- and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-δ. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors. © 2011 The American Physical Society.1 aRavichandran, J.1 aSiemons, W.1 aScullin, M.L.1 aMukerjee, S.1 aHuijben, M.1 aMoore, J.E.1 aMajumdar, A.1 aRamesh, Ramamoorthy uhttps://rameshlab.lbl.gov/publications/tuning-electronic-effective-mass